THE INFLUENCE OF THE PROMOTOR Co ATOMS ON THE ELECTRONIC STRUCTURE OF THE HIGHLY EDGED PLANE OF MoS2 CRYSTAL

作     者：HU Yongjun LIN Zhangda WANG Changheng XIE Kan 胡永军;林彰达;王昌衡;谢侃

作者机构：Institute of PhysicsAcademia SinicaBeiiing 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1986年第3卷第7期

页      面：309-312页

学科分类：081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 

主　　题：influence crystal surfaces 

摘      要：To elucidate the promotion action of cobalt on Mo sulfide catalysts, UV-Photoelectron Spectroscopy(UPS), X-ray Photoelectron Spectroscopy (XPS) and Lou Energy Diffraction(LEED) have been applied to study the submonolayer deposited process of metal Co on the highly edged surfaces of MoS2 crystal. The results show that the electronic effect near EF rather than the chemical changes on the surfaces, might be primary influence.