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3^(rd) and 4^(th) Generation ECRIS:Some Possible Scenarios

第三代和第四代ECR离子源:未来展望(英文)

作     者:S.Gammino 

作者机构:Istituto Nazionale Fisica Nucleare-Laboratori Nazionali del Sud (INFN-LNS)95123 CataniaItaly 

出 版 物:《Chinese Physics C》 (中国物理C(英文版))

年 卷 期:2007年第31卷第S1期

页      面:137-141页

核心收录:

学科分类:08[工学] 082701[工学-核能科学与工程] 0827[工学-核科学与技术] 

主  题:ECR ion sources plasma microwaves ion beams superconducting magnets 

摘      要:Since the end of’70s the Electron Cyclotron Resonance ion sources(ECRIS)allowed to increase both the energy and intensity of the beams available from different types of accelerators;perspectives for the future are still *** is commonly agreed that only some ECRIS parameters have been fully exploited, whether some others are still not efficiently used,or not *** developments in the last 20 years have followed the so called Standard Model and the availability of higher frequency generators and higher field magnets have permitted relevant increase;the use of Nb_3Sn may extend the *** availability of new schemes of microwave coupling to plasma is promising,and the focusing of the electromagnetic wave towards the chamber axis may improve the density of warm electron *** paper will also describe some critical point of the 3^(rd) generation ECRIS(including technological troubles and limits)and the scenario for future 4^(th) generation ECRIS,operating at f=56—75GHz,to be built in 2010s.

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