Bandgap broadening at grain boundaries in single-layer MoS2
Bandgap broadening at grain boundaries in single-layer MoS2作者机构：Institute of Physics & University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing I00190 China School of Physics Beijing Institute of Technology Beijing 10008 I China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2018年第11卷第11期
页 面：6102-6109页
核心收录：
学科分类：07[理学]
基 金：We thank Sokrates T. Pantelides and Min Ouyang for their constructive suggestions. Financial support from the National Key Research & Development Projects (Nos. 2016YFA0300904 and 2016YFA0202300) the National Basics Research Program (Nos. 2013CB934500 and 2013CBA01600) and the National Natural Science Foundation of China (Nos. 51661135026 61390501 61390503 and 61325021) is gratefully acknowledged
主 题：MoS 2 grain boundary bandgap scanning tunneling microscopy
摘 要：Two-dimensional semiconducting transition-metal dichalcogenides have attracted considerable interest owing to their unique physical properties and future device applications. In particular, grain boundaries (GBs) have been often observed in single-layer MoS2 grown via chemical vapor deposition, which can significantly influence the material properties. In this study, we examined the electronic structures of various GBs in single-layer MoS2 grown on highly oriented pyrolytic graphite using low-temperature scanning tunneling microscopy/spectroscopy. By measuring the local density of states of a series of GBs with tilt angles ranging from 0° to 25°, we found that the bandgaps at the GBs can be either broadened or narrowed with respect to the intrinsic single-layer MoS2. The bandgap broadening shows that the GBs can become more insulating, which may directly influence the transport properties of nanodevices based on polycrystalline single-layer MoS2 and be useful for optoelectronics.
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