Hot electron transport in wurtzite-GaN:effects of temperature and doping concentration

作     者：Aritra Acharyya 

作者机构：Department of Electronics and Communication Engineering Cooch Behar Government Engineering College 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第7期

页      面：48-53页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：electron drift velocity hot electron transport GaN scattering limited velocity 

摘      要：The hot electron transport in wurtzite phase gallium nitride（Wz-GaN） has been studied in this paper. An analytical expression of electron drift velocity under the condition of impact ionization has been developed by considering all major scattering mechanisms such as deformation potential acoustic phonon scattering, piezoelectric acoustic phonon scattering, optical phonon scattering, electron-electron scattering and ionizing scattering. Numerical calculations show that electron drift velocity in Wz-GaN saturates at 1.44 ×10^5 m/s at room temperature for the electron concentration of 10^22 m^-3. The effects of temperature and doping concentration on the hot electron drift velocity in Wz-GaN have also been studied. Results show that the saturation electron drift velocity varies from 1.91 ×10^5-0.77 ×10^5 m/s for the change in temperature within the range of 10-1000 K, for the electron concentration of 10^22 m^-3; whereas the same varies from 1.44 ×10^5-0.91 ×10^5 m/s at 300 K for the variation in the electron concentration within the range of 10^22-10^25 m^-3. The numerically calculated results have been compared with the Monte Carlo simulated results and experimental data reported earlier, and those are found to be in good agreement.