AlGaInAs/InP coupled-circular microlasers

作     者：黄永箴 林建东 姚齐峰 吕晓萌 杨跃德 肖金龙 杜云 

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2012年第10卷第9期

页      面：49-51页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China under Grant Nos. 60777028 60723002  60838003  61006042  and 61061160502 

主　　题：InP bus mode AlGaInAs/InP coupled-circular microlasers 

摘      要：AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10^3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.