K-shell excitation dielectronic recombination resonance strengths of highly charged Helike to O-like Xe ions
K-shell excitation dielectronic recombination resonance strengths of highly charged Helike to O-like Xe ions作者机构:Shanghai EBIT LaboratoryInstitute of Modem Physicsand Key Laboratory of Nuclear Physics and Ion-beam Application(MOE)Fudan UniversityShanghai 200433People's Republic of China Research Center of Laser FusionChina Academy of Engineering PhysicsMianyang 621900People's Republic of China
出 版 物:《Plasma Science and Technology》 (等离子体科学和技术(英文版))
年 卷 期:2018年第20卷第7期
页 面:72-76页
核心收录:
学科分类:08[工学] 081304[工学-建筑技术科学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0827[工学-核科学与技术] 082701[工学-核能科学与工程] 0813[工学-建筑学] 0702[理学-物理学]
主 题:dielectronic recombination (DR) electron ion beam trap (EBIT)
摘 要:Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn (n=L, M, N and O) DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.