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Monte Carlo simulation of incident electrons passing through thin metal layer

Monte Carlo simulation of incident electrons passing through thin metal layer

作     者:Tian-Long He Hong-Liang Xu Kai-Ting Huang Zhi-Liang Ren De-Rong Xu 

作者机构:National Synchrotron Radiation LaboratoryUniversity of Science and Technology of China 

出 版 物:《Nuclear Science and Techniques》 (核技术(英文))

年 卷 期:2018年第29卷第7期

页      面:182-190页

核心收录:

学科分类:08[工学] 082701[工学-核能科学与工程] 0827[工学-核科学与技术] 

基  金:supported by the National Natural Science Foundation of China(No.11375176) 

主  题:蒙特卡罗模拟 金属层 电子 事件 模拟模型 NIST 防护效果 精力 

摘      要:A Monte Carlo simulation using two schemes,the discrete energy loss approach and the continuous slowing down approximation,was implemented in C++ to calculate the energy transmission coefficient and average energy loss for low-energy(1–10 keV) incident electrons passing through a thin metal *** simulation model uses the Ashley model for electron inelastic scattering,the electron elastic scattering cross section taken from the NIST database,and the stopping power derived from the full Penn *** results of the two schemes agree well with each other and can be used to quantitatively evaluate the shielding effect of a thin coated metal layer on incident electrons for a diamond amplified photocathode.

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