Evolution of individual quantum Hall edge states in the presence of disorder
Evolution of individual quantum Hall edge states in the presence of disorder作者机构：1School of Physics Beijing Institute of Technology Beijing 100081 China Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Energy Shenzhen University Shenzhen 518060 China Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing 100081 China
出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)
年 卷 期：2018年第13卷第4期
页 面：129-137页
核心收录：
学科分类：0710[理学-生物学] 07[理学] 08[工学] 09[农学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）]
主 题：quantum Hall edge states Landau level quantum phase transition
摘 要：By using the Bloch eigenmode matching approach, we numerically study the evolution of individual quantum Hall edge states with respect to disorder. As demonstrated by the two-parameter renormal- ization group flow of the Hall and Thouless conductances, quantum Hall edge states with high Chern number n are completely different from that of the n = 1 case. Two categories of individual edge modes are evaluated in a quantum Hall system with high Chern number. Edge states from the lowest Landau level have similar eigenfunctions that are well localized at the system edge and independent of the Fermi energy. On the other hand, at fixed Fermi energy, the edge state from higher Landau levels exhibit larger expansion, which results in less stable quantum Hall states at high Fermi energies. By presenting the local current density distribution, the effect of disorder on eigenmode-resolved edge states is distinctly demonstrated.
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