Surface roughness modulated resistivity in copper thin films

作     者：HongKang Song Ke Xia Jiang Xiao 

作者机构：Department of Physics Beijing Normal University Beijing 100875 China Department of Physics and State Key Laboratory of Surface Physics Fudan University Shanghai 200433 China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2018年第61卷第10期

页      面：70-77页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11722430,11734004,61774017,21421003,and11474065) the National Key Research Program of China(Grant Nos.2016YFA0300702,and 2017YFA0303300) the National Basic Research Program of China(Grant No.2014CB921600) 

主　　题：thin film thickness dependent resistivity surface roughness 

摘      要：The surfaces of metallic thin films are never flat. The resistivity in thin films is very different from that in bulk because of the unavoidable rough surfaces. In this study, we apply a quantum-mechanical method to study the resistivity in metallic thin *** resulting resistivity formula for metallic thin films merely involves two parameters: bulk relaxation time and surface roughness. We use the formula to fit a large number of experimental data sets for copper thin films obtained using different growing methods. With an additional tuning parameter for calibrating the film thickness, the quantum formula can provide a universal fitting to most data with a satisfactory precision, regardless of their growing methods or data source.