Low-temperature synthesis of SiC nanowires with Ni catalyst

作     者：Wei-Li Xie Xiao-Dong Zhang Wen-Hui Liu Qi Xie Guang-Wu Wen Xiao-Xiao Huang Jian-Dong Zhu Fei-Xiang Ma 

作者机构：School of Material Science and EngineeringHarbin Institute of Technology Department of ProsthodonticsSchool of StomatologyHarbin Medical University School of Material Science and EngineeringHarbin Institute of Technology at Weihai 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2019年第38卷第3期

页      面：206-209页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financially supported by the National High Technology Research and Development Program (No. 2007AA03Z340) the National Natural Science Foundation of China (Nos. 51202045,51021002, 51172050, 51102063, 51372052 and 50672018) the Fundamental Research Funds for the Central Universities(No. HIT. NSRIF. 2013004) the Key Technology Research and Development Program of Heilongjiang Province (No. GC12C305-3) 

主　　题：SiC nanowires Single crystalline silicon Ni catalyst Growth mechanism 

摘      要：SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is *** present work provides an efficient strategy for the production of high-quality SiC nano wires.