Confined-solution process for high-quality CH3NH3PbBr3 single crystals with controllable morphologies
Confined-solution process for high-quality CH3NH3PbBr3 single crystals with controllable morphologies作者机构:Key Laboratory for the Physics and Chemistry of Nanodevices Beijing National Laboratory of Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 China Academy for Advanced In terdisciplinary Studies Peking University Beijing 100871 China College of Engineering Peking University Beijing 100871 China State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 China Electron MicroscopyLaboratory Peking University Beijing 100871 China Bruker (Beijing) Scientific Technology Co. Ltd. Beijing 100081 China
出 版 物:《Nano Research》 (纳米研究(英文版))
年 卷 期:2018年第11卷第6期
页 面:3306-3312页
核心收录:
学科分类:080103[工学-流体力学] 08[工学] 080104[工学-工程力学] 0803[工学-光学工程] 0801[工学-力学(可授工学、理学学位)]
基 金:supported by the National Key Research and Development Program of China 国家自然科学基金
主 题:contmea solution process single crystal perovskite atomic-scale flatness
摘 要:Solution processes have shown excellent potential for application to the growth of single-crystal materials. We have developed a confined-solution method for the preparation of single crystals with a controlled morphology. By confining the precursor solution within a micrometer-thick cavity and then controlling the saturation by adjusting the temperature gradient and fluid flow, high-quality CHBNH3PbBr3 single crystals with tunable morphologies could be obtained. The morphologies of the CH3NH3PbBr3 can be adjusted from sub-square centimeter-scale thin sheets that are square or rectangular, to one-dimensional wires with lengths in the order of centimeters, simply by changing the temperature. The thicknesses of the CH3NH3PbBr3 sheets could be adjusted from hundreds of nanometers to tens of microns. The CH3NHBPbBr3 sheets feature very clean surfaces with an atomic-scale roughness. This simple strategy provides a means of growing high-quality single crystals with clean surfaces, which realize high levels of performance when applied to devices.