Threshold control in VCSELs by proton implanted depth

作     者：赵红东 孙梅 王伟 马连喜 刘会丽 李文超 刘琦 

作者机构：College of Information EngineeringHebei University of Technology Department of PhysicsBlinn College 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2011年第7卷第4期

页      面：263-265页

核心收录：

学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学] 

基　　金：supported by the Natural Science Foundation of Hebei Province (No.F2007000096) the Research Foundation for the Doctoral Program of Higher Education of China (No.20070080001) 

主　　题：Protons 

摘      要：The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main *** characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three *** is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the injected current threshold power and enhance the laser temperature in active *** results also indicate that there are optimal values for current aperture in proton implanted *** minimum injected current threshold can be achieved in VCSELs with proton implantation near the active region and confinement radius of 1.5 mm,while the VCSELs with proton implantation in the middle of p-type distributed Bragg reflectors(DBRs) and confinement radius of 2.5 mm can realize the minimum temperature.