CHARACTERS OF NTD FZ(H_(2)) Si KEPT AT ROOM TEMPERATURE FOR THREE YEARS

作     者：MENG Xiangti 孟祥提

作者机构：Institute of Nuclear Energy TechnologyTsinghua UniversityBeijing 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1989年第6卷第2期

页      面：80-83页

核心收录：

学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学] 

主　　题：vacancy bands cluster 

摘      要：It has been found that the hydrogen-dtfect shallow donors do not appear,and some strong neutron radiation-induced Si-H IR bands,such as 1882 and 2054cm^(-1) disappear;but the strength of some others,e.g.1979 and 2065cm^(-1) increases greatly for NTD FZ(H_(2))Si kept at room temperature for 3 *** changes indicate that at room temperature simple point defects diffuse and interact,and hydrogen atoms trap the vacancy and vacancy cluster *** gives important information in the discussion of the micro-structures of the above Si-H IR bands.