The L-shell ionization of Ho and Os induced by electron impact

作     者：WU Zhangwen, GOU Chengjun, YANG Dailun, PENG Xiufeng, HE Fuqing & LUO Zhengming Key Laboratory for Radiation Physics and Technology of the Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China 

作者机构：Key Laboratory for Radiation Physics and Technology of the Education Ministry of China China Institute of Nuclear Science and Technology Sichuan University Chengdu China 

出 版 物：《Chinese Science Bulletin》 (CHINESE SCIENCE BULLETIN)

年 卷 期：2006年第51卷第16期

页      面：1929-1933页

核心收录：

学科分类：08[工学] 0827[工学-核科学与技术] 082701[工学-核能科学与工程] 

基　　金：International Atomic Energy Agency IAEA: 12354/R1 

主　　题：钬 锇 电子冲击 电离 X射线 

摘      要：The electron-induced L-shell X-ray par- tial production cross sections, total production cross sections and mean ionization cross sections for Ho and Os have been measured as functions of electron energies from near threshold up to 36 keV by using a thin target with thick substrate technique. The influ- ence of the electrons reflected from the substrate was corrected by using the electron transport biparti- tion model. Also, the corrected measured results were compared with theoretical predictions proposed by Gryzinski and McGuire.