XPS STUDY OF ION IRRADIATED Cu/SiO_(2) INTERFACES

作     者：LIU Jiarui CHEN Zhengyuan GUO Xiaodong 刘家瑞;陈征远;郭效东

作者机构：Institute of PhysicsAcademia SinicaBeijing Institute of Aeronautical MaterialsMinistry of Aeronautics and AstronauticsBeijing 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1989年第6卷第3期

页      面：135-137页

核心收录：

学科分类：0202[经济学-应用经济学] 02[经济学] 020205[经济学-产业经济学] 

主　　题：irradiation interface bonded 

摘      要：XPS study was carried out on Cu/SiO_(2) interface following the irradiation of 6.0MeV Siion *** chemical shift in the copper spectra reveals for the first time the existence of a chemically bonded structure in the interface region resulting from ion irradiation.