Adsorption and Thermal Decomposition of SiH4 on Cu(111) by Multiple-Scattering Cluster Method

作     者：HE Jiang-ping TANG Jing-chang 何江平;唐景昌

作者机构：Department of PhysicsState Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2000年第17卷第7期

页      面：525-527页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No.19974036 

主　　题：method Cu(111) Adsorption 

摘      要：Adsorption and thermal decomposition of SiH4 on Cu(111)at 110 K has been studied by the calculation of silicon K-edge near edge x-ray absorption fine structure spectra using multiple-scattering cluster *** is found that the cleavage of Si-H bond yields SiH3 species adsorbed on the fcc 3-fold hollow sites on Cu(111)surface at 110K.