Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode

作     者：Xin Hu Shaoqiang Tang Maxime Leroux 

作者机构：CAPTCollege of EngineeringPeking UniversityBeijing 100871China Applied and ComputationalMathematicsCalifornia Institute of TechnologyPasadenaCA 91125USA Department of PhysicsENS de Lyon69364 Lyon cedex 07France 

出 版 物：《Communications in Computational Physics》 (计算物理通讯（英文）)

年 卷 期：2008年第4卷第10期

页      面：1034-1050页

核心收录：

学科分类：07[理学] 0704[理学-天文学] 0701[理学-数学] 0702[理学-物理学] 070101[理学-基础数学] 

基　　金：This research is partially supported by NSFC under grant No.90407021 National Basic Research Pro-gram of China under contract number 2007CB814800 the China Ministry of Educa-tion under contract number NCET-06-0011 

主　　题：Quantum effects charge transport dissipation transient/stationary computation 

摘      要：We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type *** numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady *** particular,growing oscillations are observed at relatively large applied voltage.A dynamical bifurcation is responsible for the stability interchange of the steady *** and stationary computations are also performed for a unipolar quantum drift-diffusion model.