1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

作     者：JUN WANG HAIYANG HU HAWING YIN YIMING BAI JIAN LI XIN WEI YUANYUAN LIU YONGQING HUANG XIAOMIN REN HUIYUN LIU 

作者机构：State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing 100876 China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China Laboratory of Nano Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Department of Electronic & Electrical Engineering University College London London WC1E 7JE UK 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2018年第6卷第4期

页      面：321-325页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 070207[理学-光学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Beijing University of Posts and Telecommunications(BUPT)(IPOC2016ZT01) National Natural Science Foundation of China(NSFC)(61474008,61574019,61674020) International Science&Technology Cooperation Program of China(2011DFR11010) 111 Project of China(B07005) 

主　　题：量子点 激光 通讯技术 发展现状 

摘      要：We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and an Al_(0.53)Ga_(0.47)As lower cladding layer was directly grown on Si by metal–organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550°C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-μm stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at ~1.3 μm has been achieved with a threshold density of 737 A∕cm^2 and a single-facet output power of 21.8 mW.