Pressure-Induced Charge Transfer and Pressure Dependence of the Superconducting Transition Temperature in HgBa_(2)CuO_(4+δ)

作     者：CHEN Xiao-jia GONG Chang-de 陈晓嘉;龚昌德

作者机构：Department of PhysicsNational Laboratory of Solid State MicrostructuresInstitute for Solid State PhysicsNanjing UniversityNanjing 210093 Center for Advanced Studies in Science and Technology of MicrostructuresNanjing 210093 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1998年第15卷第9期

页      面：680-682页

核心收录：

学科分类：080705[工学-制冷及低温工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0807[工学-动力工程及工程热物理] 0702[理学-物理学] 

基　　金：Supported by Keli Fellowship financed by Sanzhu Co.,Ltd.in Shandong in part by China Postdoctoral Science Foundation 

主　　题：Transition singularity optimal 

摘      要：The pressureinduced changes of hole concentration and pressure effects on Tc in HgBa2CuO4+δ(δ=0.07-0.39)have been investigated on the basis of the pressureinduced charge transfer *** calculations show that large enhancements in Tc under high pressure can be obtained for materials which are underdoped,and not for compounds which have nearly optimal hole *** the other hand,Tc enhancements in compounds which are heavily overdoped are found to be quite *** theoretical prediction is in agreement with *** possible intrinsic factors which are responsible for the pressure dependence of the maximum Tc are discussed within the van Hove singularity scenario.