Non-monotonic dependence of current upon i-width in silicon p–i–n diodes
Non-monotonic dependence of current upon i-width in silicon p–i–n diodes作者机构：Institute of Microelectronics School of Physical Science and Technology Lanzhou University Lanzhou 730000 China
出 版 物：《Chinese Physics B》 (中国物理B（英文版）)
年 卷 期：2018年第27卷第6期
页 面：341-344页
核心收录：
主 题：semiconductor junction diodes transport properties
摘 要：Silicon p–i–n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.
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