Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

作     者：Yuanyuan XUE Zujun WANG Wei CHEN Baoping HE Zhibin YAO Minbo LIU Jiangkun SHENG Wuying MA Guantao DONG Junshan JIN 

作者机构：State Key Laboratory of Intense Pulsed Irradiation Simulation and EffectNorthwest Institute of Nuclear Technology 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2018年第61卷第6期

页      面：209-218页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

基　　金：supported by Strategic Priority Research Program of Chinese Academy of Science(Grant No.XDA15015000) National Natural Science Foundational of China(Grant No.11690043) Foundation of State Key Laboratory of China(Grant No.SKLIPR1610) 

主　　题：modeling CIS neutron radiation dark signal Geant4 

摘      要：The dark signal degradation of the CMOS image sensor(CIS) was induced by neutron radiation,and it was modeled by Geant4, which is a three-dimensional Monte Carlo code. The simplified model of the CIS array was established according to the actual pixel geometry, material, and doping concentration. Nuclear elastic interaction and capture interaction were included in the physical processes, and the displacement damage dose in the space charge region of the pixel was calculated. The mean dark signal and dark signal distribution were modeled using Geant4, and the physical mechanisms were analyzed. The modeling results were in good agreement with the experimental and theoretical results.