Multiferroic Consequence of Porous (BiFeO_3)_x–(BiCrO_3)_(1-x) Composite Thin Films by Novel Sol–Gel Method
Multiferroic Consequence of Porous (BiFeO_3)_x–(BiCrO_3)_(1-x) Composite Thin Films by Novel Sol–Gel Method作者机构:Department of Physics Mepco Schlenk Engineering College Department of Chemistry Mepco Schlenk Engineering College UGC-DAE Consortium for Scientific Research University Campus
出 版 物:《Acta Metallurgica Sinica(English Letters)》 (金属学报(英文版))
年 卷 期:2018年第31卷第3期
页 面:299-307页
核心收录:
学科分类:07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0802[工学-机械工程] 0703[理学-化学] 0811[工学-控制科学与工程] 0702[理学-物理学]
基 金:supported by Department of Science and Technology (SB/S2/CMP- 028/2013) New Delhi India
主 题:Multiferroic Dual-phase composites Spin-coating method NV-Fe-RAM PUND
摘 要:In this work,we have presented a spin-coating method to produce thin films started with pure BiCrO3(BCO)and ended up with BiFeO3(BFO)by increasing x values in the(BiFeO3)x-(BiCrO3)1-x *** the produced thin films have been crystallized at the annealing temperatures of 400 ℃ for 0.5 *** XRD and EDAX spectrums give insight that the two crystal phases related to BCO and BFO stayed together within the thin film *** analysis showed that the prepared composite had macroporous morphology with interconnected pores and its width(size)decreased with increasing x *** strong correlations are observed among the microstructure,dielectric,ferroelectric,ferromagnetic properties and Fe *** all composites,the composition of 0.75 shows an attractive magnetization,polarization,switching and improved dielectric behaviors at room *** increase in the multiferroic characteristics of 0.75 composition is due to arise of lower leakage current by causing reduction in oxygen vacancy density,and enhancement of super-exchange magnetic interaction between Fe3+ and Cr3+ at BFO/BCO interface *** result shows that the thin layer on Pt(111)/Ti/SiO2/Si substrate possesses simultaneously improved ferroelectric and ferromagnetic properties which make an inaccessible potential application for nonvolatile ferroelectric memories.