Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO_2 films

作     者：Yu Zhang Jun Xu Da-Yu Zhou Hang-Hang Wang Wen-Qi Lu Chi-Kyu Choi 张昱;徐军;周大雨;王行行;陆文琪;Chi-Kyu Choi

作者机构：Key Laboratory of Materials Modification by Laser Ion and Electron Beams Ministry of Education School of Physics Dalian University of Technology Dalian 116024 China School of Materials Science and Engineering Dalian University of Technology Dalian 116024 China Department of Physics Jeju National University Jeju 63243 Korea 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第4期

页      面：514-519页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51272034 and 51672032) the Fundamental Research Funds for the Central Universities,China(Grant No.DUT17ZD211) 

主　　题：Y-doped HfO2 ultra-thin film high-k x-ray photoelectron spectrum 

摘      要：Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering *** effects of Y content on the bonding structure,crystallographic structure,and electrical properties of Y-doped HfO2 films are *** x-ray photoelectron spectrum（XPS） indicates that the core level peak positions of Hf 4 f and O 1 s shift toward lower energy due to the structure change after Y *** depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have *** x-ray diffraction and high resolution transmission electron microscopy（HRTEM） analyses reveal the evolution from monoclinic HfO2 phase towards stabilized cubic HfO2 phase and the preferred orientation of（111） appears with increasing Y content,while pure HfO2 shows the monoclinic phase *** leakage current and permittivity are determined as a function of the Y *** best combination of low leakage current of 10-7 A/cm^2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%.A correlation among Y content,phase evolution and electrical properties of Y-doped HfO2 ultra-thin film is investigated.