Thermal properties of transition-metal dichalcogenide

作     者：刘向军 张永伟 Xiangjun Liu and Yong-Wei Zhang

作者机构：Institute of High Performance ComputingA*STAR 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第3期

页      面：12-19页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：financial support by the Agency for Science, Technology and Research (A*STAR), Singapore the use of computing resources at the A*STAR Computational Resource Centre, Singapore supported in part by the Science and Engineering Research Council (152-70-00017) 

主　　题：transition metal dichalcogenide MoS2 thermal conductivity interracial thermal conductance 

摘      要：Beyond graphene, the layered transition metal dichalcogenides （TMDs） have gained considerable attention due to their unique properties. Herein, we review the lattice dynamic and thermal properties of monolayer TMDs, including their phonon dispersion, relaxation time, mean free path （MFP）, and thermal conductivities. In particular, the experimental and theoretical studies reveal that the TMDs have relatively low thermal conductivities due to the short phonon group velocity and MFP, which poses a significant challenge for efficient thermal management of TMDs-based devices. Importantly, recent studies have shown that this issue could be largely addressed by connecting TMDs and other materials （such as metal electrode and graphene） with chemical bonds, and a relatively high interracial thermal conductance （ITC） could be achieved at the covalent bonded interface. The ITC of MoS2/Au interface with chemical edge contact is more than 10 times higher than that with physical side contact. In this article, we review recent advances in the study of TMD-related ITC. The effects of temperature, interfacial vacancy, contact orientation, and phonon modes on the edge-contacted interface are briefly discussed.