Investigation of hybrid microring lasers adhesively bonded on silicon wafer

作     者：Shao-Shuai Sui Ming-Ying Tang Yue-De Yang Jin-Long Xiao Yun Du Yong-Zhen Huang 

作者机构：The State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2015年第3卷第6期

页      面：289-295页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the High Technology Project of China under grant 2012AA012202 NSFC/RGC joint project under grant 61431166003 

主　　题：Investigation of hybrid microring lasers adhesively bonded on silicon wafer InP mode 

摘      要：Thermal characteristics are numerically investigated for the hybrid AlGaInAs/InP on silicon microring lasers with different ring radii and widths. Low threshold current and low active region temperature rise are expected for a microring laser with a narrow ring width. Based on the thermal analysis and the 3D simulation for mode characteristics, a hybrid AlGaInAs/InP on silicon microring lasers with an inner n-electrode laterally confined by the p-electrode metallic layer is fabricated using an adhesive bonding technique. A threshold current of 4 mA is achieved for a hybrid microring laser with a radius of 20 μm and a ring width of 3.5 μm at 12°C, and the corresponding threshold current density is as low as 1 kA∕cm^2. The influence of the location of silicon waveguide on output performance is studied experimentally for improving the output coupling efficiency. Furthermore,continuous-wave electrically injected lasing up to 55°C is realized for a hybrid microring laser with a radiusof 30 μm and a ring width of 3 μm.