Epitaxially grown monolayer VSe2： an air-stable magnetic two-dimensional material with low work function at edges

作     者：Zhong-Liu Liu Xu Wu Yan Shao Jing Qi Yun Cao Li Huang Chen Liu Jia-Ou Wang Qi Zheng Zhi-Li Zhu Kurash Ibrahim Ye-Liang Wang Hong-Jun Gao 

作者机构：Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049 China CAS Center for Excellence in Topological Quantum Computation Beijing 100049 China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2018年第63卷第7期

页      面：419-425页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：supported by the National Natural Science Foundation of China(61725107,51572290 and 11334006) National Key Research&Development Projects of China(2016YFA0202301) National Basic Research Program of China(2013CBA01601) Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDPB06) 

主　　题：VSe2 Two dimensional materials Magnetism Epitaxial growth Scanning tunneling microscopy (STM) 

摘      要：Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer twodimensional(2 D) materials, which makes fabrication of new magnetic 2 D materials a fascinating ***, we report the growth of monolayer VSe_2 by molecular beam epitaxy(MBE) method. Electronic properties measurements by scanning tunneling spectroscopy(STS) method revealed that the asgrown monolayer VSe_2 has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe_2. This high-quality monolayer VSe_2, a very air-inert 2 D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.