Facilitative effect of graphene quantum dots in MoS_2 growth process by chemical vapor deposition

作     者：张璐 王永生 董艳芳 赵宣 付晨 何大伟 

作者机构：Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第1期

页      面：579-582页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2016YFA0202300 and 2016YFA0202302) the National Natural Science Foundation of China(Grant Nos.61527817,61335006,and 61378073) the Overseas Expertise Introduction Center for Discipline Innovation,111 Center,China 

主　　题：MoS2 seed graphene quantum dots （GQDs） continuous film 

摘      要：The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition （CVD） process. Herein, graphene quantum dots （GQDs） as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous.