High-yield synthesis and liquid-exfoliation of two- dimensional belt-like hafnium disulphide

作     者：Harneet Kaur Sandeep Yadav Avanish K. Srivastava Nidhi Singh Shyama Rath Jorg J. Schneider Om P. Sinha Ritu Srivastava 

作者机构：National Physical Laboratory Council of Scientific and Industrial Research Dr. K. S. Krishnan Road New Delhi I I O012 India Academy of Scientific and Innovative Research NPL New Delhi 110012 India Technische Universitat Darmstadt Eduard-ZintMnstitut f~r Anorganische und Physikalische Chemie 12 105 117 Alarich-Weiss-Str 12 64287 Darmstadt Germany DepartmentofPhysics andAstrophysics University of Delhi Delhi 110007 India Amity Institute of Nanotechnology Amity University UP Sector 125 Noida Uttar Pradesh 201313 India 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2018年第11卷第1期

页      面：343-353页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0702[理学-物理学] 

基　　金：supported by the LOEWE project STT by the state of Hesse at Technische Universitat Darmstadt UGC-SRF Indore, DST and CSIR-TAPSUN NWP-55 project 

主　　题：two-dimensionalmaterials hafnium disulphide nano-crystals liquid-phase exfoliation environment-stabili~ field-effect transistor 

摘      要：Producing environmentally stable monolayers and few-layers of hafnium disulphide （HfS2） with a high yield to reveal its unlocked electronic and optoelectronic applications is still a challenge. HfS2 is a layered two-dimensional material of group-IV transition metal dichalcogenides. For the first time, we demonstrate a simple and cost-effective method to grow layered belt-like nanocrystals of HfS2 with a notably large interlayer spacing followed by their chemical exfoliation. Various microscopic and spectroscopic techniques confirm that these as-grown crystals exfoliate into single or multiple layers in a few minutes using solvent assisted ultrasonification method in N-cyclohexyl-2- pyrrolidone. The exfoliated nanosheets of HfS2 exhibit an indirect bandgap of 1.3 eV with high stability against surface degradation. Furthermore, we demonstrate that these nanosheets hold potential for electronic applications by fabricating a field-effect transistor based on few-layered HfS2, exhibiting a field-effect mobility of 0.95 cm2/（V.s） with a high on/off current modulation ratio of 10,000 in ambient conditions. The method is scalable and has a potential significance for both academic and industrial purposes.