Thickness Effect on (La_(0.26)Bi_(0.74))_2Ti_4O_(11) Thin-Film Composition and Electrical Properties

作     者：Hui-Zhen Guo An-Quan Jiang 郭会珍;江安全

作者机构：State Key Laboratory of ASIC & SystemSchool of MicroelectronicsFudan University 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2018年第35卷第2期

页      面：66-70页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the Basic Research Project of Shanghai Science and Technology Innovation Action under Grant No 17JC1400300 the National Key Basic Research Program of China under Grant No 2014CB921004 the National Natural Science Foundation of China under Grant No 61674044 the Program of Shanghai Subject Chief Scientist under Grant No 17XD1400800 

主　　题：Bi Ti Thin-Film Composition and Electrical Properties LNO La 

摘      要：Highly oriented（00l）（La_（0.26）Bi_（0.74））_2Ti_4O_（11 ）thin films are deposited on（100） SrTiO_（3 ）substrates using the pulsed laser deposition *** grains form a texture of bar-like arrays along Sr Ti O_3110directions for the film thickness above 350 nm,in contrast to spherical grains for the reduced film thickness below 220 nm.X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components above a critical film ***,the phase decomposes into the random mixture of Bi_2Ti_2O_（7 ）and Bi_4Ti_3O_（4 ）spherical grains in thinner *** critical thickness can increase up to 440 nm as the films are deposited on LaNiO_3-buffered SrTiO_（3 ）*** electrical measurements show the dielectric enhancement of the multi-components,and comprehensive charge injection into interfacial traps between（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components occurs under the application of a threshold voltage for the realization of high-charge storage.