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Crystallization Behavior of Polymer Derived Silicon Carbide Sintered Through Microwave Heating Technique

Crystallization Behavior of Polymer Derived Silicon Carbide Sintered Through Microwave Heating Technique

作     者:熊俊 HUANG Qing 

作者机构:School of Materials Science and Engineering Tianjin University Tianjin 300072 China 

出 版 物:《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报(材料科学英文版))

年 卷 期:2017年第32卷第6期

页      面:1368-1373页

核心收录:

学科分类:081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基  金:Funded by the National Natural Science Foundation of China(Nos.91226202 and 91426304) 

主  题:liquid highly branched polycarbosi'ane microwave heating crystallization behavior β-SiC 

摘      要:A self-crosslinkable liquid highly branched polycarbosilane(LHBPCS) with 5.07% vinyl group and a C/Si ratio of 1.33 was used as the precursor to prepare Si C ceramic material. Microwave heating technique and conventional heating method were applied for the heating treatment process. It was found that, compared with conventional heating method, microwave heating technique could enhance the crystallinity of Si C ceramic material with small grain size at much lower curing temperature and within shorter time. In addition, the SiO_2 additive could lead to less α-Si C and excess carbon, but worsen the crystallinity of β-Si C in the final samples.

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