The study of the interactions between graphene and Ge（001）/Si（001）

作     者：Pawel Dabrowski Maciej Rogala Iwona Pasternak Jacek Baranowski Wlodzimierz Strupinski Marek Kopciuszynski Ryszard Zdyb Mieczyslaw Jalochowski Iaroslav Lutsyk Zbigniew Klusek 

作者机构：Department of Solid State Physics Faculty of Physics and Applied Informatics University of Lodz Pomorska 149/153 90-236 Lodz Poland Institute of Electronic Materials Technology Wolczynska 133 01-919 Warsaw Poland Institute of Physics Maria Curie-Sklodowska University pl.M.Curie-Sklodowskiej 1 20-031 Lublin Poland Department of Solid State Physics Yuriy Fedkovych Chernivtsi National University Kotsubinsky 2 58012 Chernivtsi Ukraine 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2017年第10卷第11期

页      面：3648-3661页

核心收录：

学科分类：07[理学] 

基　　金：funding from the European Union Seventh Framework Programme supported by the National Science Centre, Poland projects 

主　　题：chemical vapor deposition surface reconstruction scanning tunneling microscopy chemical bonding first-principles calculation 

摘      要：The interaction between graphene and germanium surfaces was investigated using a combination of microscopic and macroscopic experimental techniques and complementary theoretical *** functional theory （DFT） calculations for different reconstructions of the Ge（001） surface showed that the interactions between graphene and the Ge（001） surface introduce additional peaks in the density of states,superimposed on the graphene valence and conduction energy *** growth of graphene induces nanofaceting of the Ge（001） surface,which exhibits well-organized hill and valley *** graphene regions covered by hills are of high quality and exhibit an almost linear dispersion relation,which indicates weak graphene-germanium *** the other hand,the graphene component occupying valley regions is significantly perturbed by the interaction with *** was also found that the stronger graphene-germanium interaction observed in the valley regions is connected with a lower local electrical *** of graphene/Ge（001）/Si（001） was performed to obtain a more uniform *** process results in a surface characterized by negligible hill and valley structures;however,the graphene properties unexpectedly deteriorated with increasing uniformity of the Ge（001） *** sum up,it was shown that the mechanism responsible for the formation of local conductivity inhomogeneities in graphene covering the Ge（001） surface is related to the different strength of graphene-germanium *** present results indicate that,in order to obtain high-quality graphene,the experimental efforts should focus on limiting the interactions between germanium and graphene,which can be achieved by adjusting the growth conditions.