High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

作     者：Jiaqi LIU Yuanfu ZHAO Liang WANG Dan WANG Hongchao ZHENG Maoxin CHEN Lei SHU Tongde LI Dongqiang LI Wei GUO 

作者机构：Beijing Microelectronics Technology Institute School of Astronautics Harbin Institute of Technology 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2017年第60卷第12期

页      面：123-125页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：supported in part by the National Natural Science Foundation of China(Grant Nos.11690045 61674015) 

主　　题：NOR High energy proton and heavy ion induced single event transient in 65-nm CMOS technology 

摘      要：As technology extends to nanometer scales,the critical charge to induce a single event decreases along with the technology node,and the threshold linear energy transfer(LET)for a soft error also decreases[1].Meanwhile,as the operating frequency of the integrated circuit(IC)increases,the possibility for single event transients(SETs)to be captured ***,SETs have