Theoretical Calculation for the Dip Feature in Tunnelling Experiment on Bi2212

作     者：谢刚 韩汝珊 XIE Gang;HAN Ru-Shan

作者机构：Mesoscopic Physics Laboratory and Department of PhysicsPeking UniversityBeijing 100871 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2001年第18卷第9期

页      面：1256-1257页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No.19774127 

主　　题：conductance Bi2212 calculation 

摘      要：We generalize a model, which was presented by Norman [Phys. Rev. Lett. 79 (1997) 3506], to calculate the Bi2Sr2CaCu2Os+δ (Bi2212) single-electron tunnelling conductance. In our calculation result, the dip feature appears which has been widely observed in tunnelling experiments. It is found that this dip feature in tunnelling experiments and the dip/hump feature in angle-resolved photoemission experiments have a common physics. Moreover, it is shown from our numerical calculation method that if the spectral function A(κ, ω) is known, the tunnelling conductance can be obtained.