Silicon-on-Insulator 2×2 Symmetric Optical Switch Based on Total Internal Reflection

作     者：ZHAO Ce-zhou LIU En-ke LI Guo-zheng LIU Yu-liang GUO Lin 赵策洲;刘恩科;李国正;刘育梁;郭林

作者机构：Microelectronics InstituteXidian UniversityXi'an 710071 Department of Electronic EngineeringXi'an Jiaotong UniversityXi'an 710049 Sichuan Institute of Solid-state CircuitsChongqing 630060 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1997年第14卷第2期

页      面：106-108页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Supported by the High Technology Research and Development Programme of China 

主　　题：waveguide SOI polishing 

摘      要：Based on the large cross-section single-mode rib waveguide condition,the total internal reflection and the free-carrier plasma dispersion effect,a silicon-on-insulator(SOI)2×2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated,in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and *** device performance is measured at the wavelength of 1.3μ*** shows that the crosstalk and insertion loss are less than -18.1 and 4.8 dB,respectively,at an injection current of 60mA,and response time is 110 ns.