Fabrication and characteristics of silicon-rich oxide thin films with controllable compositions

作     者：张诗雨 潘泉均 方旭 毛克宁 叶辉 

作者机构：State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang University 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2016年第14卷第5期

页      面：73-77页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Basic Research Program of China(No.2013CB632104) the National Natural Science Foundation of China(No.61575176) the Natural Science Foundation of the Zhejiang Province of China(No.LZ12F04002) the Research Foundation of the State Key Laboratory of Modern Optical Instrumentation(No.moi20150105) 

主　　题：Optical films Optical properties Oxide films Semiconducting silicon Silicon oxides Thin films 

摘      要：Silicon-rich oxide films with controllable optical constants and properties are deposited by the reactive magnet- ton sputtering method on a Si target. The O/Si atomic ratio x of SiOx is tuned from 0.12 to 1.84 by adjusting the oxygen flow rate, which is found to be a more effective way to obtain SiOx films compared with changing the oxygen content [O2/（Ar ＋ O2） ratio]. The optical properties of SiOx films can be tuned from semiconductor to dielectric as a function of ratio x. The structures and components are also investigated by an x ray photoelectron spectroscopy analysis of the Si 2p core levels, the results of which exhibit that the structures of SiOx can be thoroughly described by the random bonding model.