Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

作     者：GAO Yuzhu GONG Xiuying FANG Weizheng Akihiro Ishida 

作者机构：College of Electronics and Information Engineering Tongji University Shanghai 201804 China Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China Shizuoka University 3-5-1 Johoku Hamamatsu 432-8011 Japan 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2009年第28卷第4期

页      面：313-316页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：provided by the National Natural Science Foundation of China (No. 60777022) the Program for Young Excellent Tal-ents in Tongji University 

主　　题：InAsSb liquid phase epitaxy crystalline quality cutoff wavelength scanning electron microscopy 

摘      要：InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.