Structures and magnetic properties of Fe-Si-O films RF-sputtered in a high magnetic field

作     者：S.Mitani H.Fujimori M.Motokawa 

作者机构：Department of Applied Physics Tianjin University Tianjin China Institute for Materials Research Tohoku University Aoba-ku Sendai Japan CREST Japan 

出 版 物：《Chinese Science Bulletin》 (CHINESE SCIENCE BULLETIN)

年 卷 期：2001年第46卷第6期

页      面：466-470页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the Key TeacherSupporting Project of the National Education Committee (Grant No. G0032)  and performed in the High Field Center for Superconducing Materials  IMR  Tohoku University  Sendai  Japan 

主　　题：RF sputtering high magnetic fields orientation effects magnetic films. 

摘      要：We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si-O films prepared in the oxygen-argon flow ratio VO2/Vtotal2.0%, magnetic field Bappl≥2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si-O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition.