Synergistic effects of electrical and optical excitations on TiO_2 resistive device

作     者：毛奇 林伟坚 朱科建 孟洋 赵宏武 

作者机构：Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences School of Physical Sciences University of Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第8期

页      面：462-467页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：supported by the National Key Basic Research Project of China(Grant Nos.2013CB921700 and 2016YFA0300600) the National Natural Science Foundation of China(Grant No.11274375) the Fund from Chinese Academy of Sciences(Grant No.KJCX2-YW-W24) 

主　　题：resistance switching photoconductance relaxation oxygen vacancy 

摘      要：The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state （PRS） are observed and ascribed to the electron trapping and the oxygen transport processes. For a resistive switching （RS） device, the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device. With the illumination being off, the conductance slowly decays, which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity. The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices.