Influence of post-grown treatments on CuInS_2 thin films prepared by sulphurization of Cu-In films

作     者：YAN Youhua LIU Yingchun FANG Ling ZHAO Haihua LI Deren LU Zhichao ZHOU Shaoxiong YAN Youhua, LIU Yingchun, FANG Ling, ZHAO Haihua, LI Deren, LU Zhichao, and ZHOU Shaoxiong Advanced Technology & Materials Co., Ltd., China Iron & Steel Research Institute Group, Beijing 100081, China

作者机构：Advanced Technology ＆ Materials Co. Ltd. China Iron ＆ Steel Research Institute Group Beijing 100081 China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2008年第27卷第5期

页      面：490-495页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the National High-Tech Research and Development Program of China (No. 2006AA03Z2370) 

主　　题：solar energy CuInS2 thin film KCN etching annealing treatment sulphurization 

摘      要：Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.