Few-mode vertical-cavity surface-emitting lasers for space-division multiplexing

作     者：Yaman Su Lijuan Yu Xia Guo Xing Zhang Jianguo Liu Ninghua Zhu 

作者机构：State Key Laboratory of Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of ElectronicElectrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China School of Electronic EngineeringBeijing University of Posts and TelecommunicationsBeijing 100876China Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第9期

页      面：42-47页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the National Basic Research Program of China(No.2014CB3400102) the National Natural Science Foundation of China(No.61335004) the National High Technology Research and Development Program of China(No.2015AA017101) the National Key Technologies R&D Program of China(No.2016YFB0400603) 

主　　题：few-mode VCSELs oxide aperture space-division multiplexing 

摘      要：In order to choose the proper radius of oxide aperture for few-mode vertical-cavity surface-emitting lasers （VCSELs）, the influences of oxide aperture size on the multi-transverse-mode behaviors are investigated in detail. By establishing the effective refractive index model to simulate VCSELs with different radii of oxide apertures, the wavelength and corresponding order of different modes are obtained. VCSELs with three kinds of oxide apertures are manufactured. Then the multi-transverse-mode spectra and near-field are measured. It is found that when the radius is between 1.5 and 4.5μm, few-mode VCSELs can be implemented. The 2.5μm VCSEL manufactured in this paper only emits LP01 mode and LP21 mode. Since the space distance between the two modes is 2μm, it is expected to realize direct-modulation few-mode VCSELs by channel etching or ion implantation between the two modes.