Influence of Sputtering Power on the Structure and Electrical Properties of Bi_2Fe_4O_9 Thin Films

作     者：M.Santhiya K.S.Pugazhvadivu K.Tamilarasan C.Rangasami 

作者机构：Thin Film Research LaboratoryDepartment of PhysicsKongu Engineering CollegePerundurai 638 052India 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2017年第30卷第7期

页      面：650-658页

核心收录：

学科分类：08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0802[工学-机械工程] 0703[理学-化学] 0811[工学-控制科学与工程] 

主　　题：Bi_2Fe_4O_9 Thin films Ferroelectric Sputtering X ray diffraction Hardness 

摘      要：Bismuth ferrite（Bi_2Fe_4O_9） thin films were grown on p-type Si（100） substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy studies revealed that the grown films have single-phase polycrystalline nature and are crystallized in orthorhombic structure. The grain size of the grown thin films was found to increase（56–130 nm） with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth surface. Energy-dispersive X-ray analysis revealed the presence of Bi, Fe and O elements with desired ratio and also the absence of impurities in the grown films. Analysis of ferroelectric hysteresis loops revealed that the remanent polarization and coercive field increase with the increase in sputtering power. Vicker＇s hardness analysis showed that the hardness of films strongly depends on the grain size and film thickness, which are mainly determined by the sputtering power. The above observations revealed that Bi_2Fe_4O_9 thin film deposited at higher sputtering power has good crystallinity and shows better electrical properties.