Nanophotonics and negative ε materials
Nanophotonics and negative ε materials作者机构:Department of Microelectronics and Information Technology Royal Institute of Technology 164 40 Stockholm Sweden Kista Photonics Research Center 164 40 Stockholm Sweden Joint Research Center of Photonics of the Royal Institute of Technology Stockholm Sweden and Zhejiang University Hangzhou 310027 China Department of Microelectronics and Information Technology Royal Institute of Technology 164 40 Stockholm Sweden Kista Photonics Research Center 164 40 Stockholm Sweden
出 版 物:《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 (浙江大学学报(英文版)A辑(应用物理与工程))
年 卷 期:2006年第7卷第1期
页 面:41-44页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Project supported by the Swedish Foundation for Strategic Research
主 题:Integrated optics circuit Optical surface wave Optical waveguide Microwave circuit Waveguide
摘 要:The feasibility of using metal optics or negative ε materials, with the aim of reducing the transversal extent of waveguided photonic fields to values much less than the vacuum wavelength, in order to achieve significantly higher densities of integration in integrated photonics circuits that is possible today is discussed. Relevant figures of merit are formulated to this end and used to achieve good performance of devices with today's materials and to define required improvements in materials characteristics in terms of decreased scattering rates in the Drude model. The general conclusion is that some metal based circuits are feasible with today's matals. Frequency selective metal devices will have Q values on the order of only 10-100, and significant improvements of scattering rates or lowering of the imaginary part of e have to be achieved to implement narrowband devices. A photonic "Moore's law" of integration densities is proposed and exemplified.