THELATTICE STRAIN CAUSED BY ION IMPLANTATION

作     者：D.L. Ma and X.L. Mu Departmentof Physics,Liaoning University,Shenyang 110036 ,China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：1999年第12卷第4期

页      面：495-499页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：THELATTICE STRAIN CAUSED BY ION IMPLANTATION 

摘      要：The propertiesof As+ implantedsilicon with anenergy160kev, differentdosesand anneal ing temperatures (500 700℃) were studied by means of x ray double crystaldiffraction( DCD) and ellipometricspectra ( ES) . Therockingcurvesof DCDweresimulated by multi layer modelof Dynamicaltheory,toobtainstrain distributionsasafunctionof depths. The1×1016 cm 2 annealed at600℃wasfoundthataepitaxiallayer wasformed . The ESresult provedtheseconclusions.