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Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

作     者:刘兴翀 陆智海 张凤鸣 

作者机构:Institute of High Energy ElectronicsSchool of Physical ElectronicsUniversity of Electronic Science and Technology of China Department of PhysicsNanjing University 

出 版 物:《Chinese Physics B》 (中国物理B(英文版))

年 卷 期:2010年第19卷第2期

页      面:476-479页

核心收录:

学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 

基  金:supported by the National Key Program for Fundamental Research Development Plan of China (973 Project) 

主  题:magnetic semiconductor ZnO photoluminescence 

摘      要:This paper reports that Zn0.97Mn0.03O thin films have been prepared by radio-frequency sputtering technology followed by rapid thermal processing in nitrogen and oxygen ambient respectively. Magnetic property investigation indicates that the films are ferromagnetic and that the Curie temperature (Tc) is over room temperature. It is observed that the saturation magnetization of the films increases after annealing in nitrogen ambience but decreases after annealing in oxygen. Room temperature photoluminescence spectra indicate that the amount of defects in the films differs after annealing in the different ambiences. This suggests that the ferromagnetism in Zn0.97Mn0.03O films is strongly related to the defects in the films.

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