TWO STEPS CHEMICAL-MECHANICAL POLISHING OF RIGID DISK SUBSTRATE TO GET ATOM-SCALE PLANARIZATION SURFACE

作     者：LEI Hong LUO Jianbin LU Xinchun 

作者机构：Research Centre of Nanoscience and Nanotechnology Shanghai University Shanghai 200436 China State Key Laboratory of Tribology Tslnghua University Beijing 100084 China 

出 版 物：《Chinese Journal of Mechanical Engineering》 (中国机械工程学报（英文版）)

年 卷 期：2006年第19卷第4期

页      面：496-499页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This project is supported by National Basic Research Program of China (973 Program  N0.2003CB716201)National Natural Science Foundation of China (No.50575131)Science Foundation of Shanghai Municipal Commission of Science and Technology  China(No.0452nm013) 

主　　题：TWo steps Chemical mechanical polishing(CMP) Rigid disk substrateAtom scale planarization Slurry 

摘      要：In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.