Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

作     者：何晓光 赵德刚 江德生 

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第6期

页      面：516-520页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61377020,61376089,61223005,and 61176126) the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017) 

主　　题：high electron mobility transistors GaN two-dimensional electron gas polarization effect 

摘      要：Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.