A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process

作     者：Qian ZHOU Yan HAN Shifeng ZHANG Xiaoxia HAN Lu JIE Ray C.C.CHEUNG Guangtao FENG 

作者机构：College of Information Science and Electronic Engineering Zhejiang University Department of Electronic Engineering City University of Hong Kong Semiconductor Manufacturing International Corporation 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2017年第60卷第8期

页      面：252-254页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：The authors would like to thank the RF Circuit and System Lab of Hangzhou Dianzi University for the testing supports 

主　　题：VCO A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process CMOS in high nm LC with 

摘      要：Dear editor,Demand for higher data transmission rate,particularly in the modern communication systems,has been increasing over the *** example,the IEEE standard 802.15.3c specifies more than2 Gbps data transmission rate,which pushes the frequency band up to 60 *** the transceiver,the working frequency of VCO is in 60 GHz,and that has attracted many people to study it[1,2].However,implementing high speed voltagecontrolled oscillator(VCO)through CMOS technology can be extremely challenging because of the