A new sensitivity model with blank space for layout optimization

作     者：Junping Wang Yao Wu Shigang Liu Runsen Xing 

作者机构：School of Communication Engineering Xidian University Xi'an 710071 China School of Microelectronics Xidian University Xi'an 710071 China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第6期

页      面：102-108页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported in part by the National Natural Science Foundation of China(No.61173088) the Science & Technology Program of Xi’an,China(No.CX12485) the 111 Project(No.B08038) 

主　　题：blank space critical area missing material defect layout optimization 

摘      要：As the technology scales advancing into the nanometer region,the concept of yield has become an increasingly important design metric.To reduce the yield loss caused by local defects,layout optimization can play a critical role.In this paper,we propose a new open sensitivity-based model with consideration of the blank space around the net,and study the corresponding net optimization.The proposed new model not only has a high practicability in the selection of nets to be optimized but also solves the issue of the increase in short critical area brought during the open optimization,which means to reduce the open critical area with no new short critical area produced,and thereby this model can ensure the decrease of total critical area and finally achieves an integrative optimization.Compared with the models available,the experimental results show that our sensitivity model not only consumes less time with concise algorithm but also can deal with irregular layout,which is out of the scope of other models.At the end of this paper,the effectiveness of the new model is verified by the experiment on the randomly selected five metal layers from the synthesized OpenSparc circuit layout.