Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

作     者：Hyegyeong Kim JiWoong Kim Dooyong Lee Won-Jae Lee Jong-Seong Bae Jaekwang Lee Sungkyun Park 

作者机构：Department of Physics Pusan National University Department of Nano Engineering & Electronic Research Center Dong-Eui University Busan Center Korea Basic Science Institute 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2017年第33卷第6期

页      面：523-526页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported in part by NRF Korea (No. NRF2015R1D1A1A01058672) Korea Atomic Energy Research Institute supported by the GPF Program (No. 2015H1A2A1034200) of NRF 

主　　题：ZnO films Annealing Oxygen vacancies Environmental stability 

摘      要：Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.