Spin-Polarization in Quasi-Magnetic Tunnel Junctions
Spin-Polarization in Quasi-Magnetic Tunnel Junctions作者机构:College of Physics and Electronic Engineering Sichuan Normal University Chengdu 610066
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2017年第34卷第5期
页 面:115-118页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学]
基 金:Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and16ZA0047 the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No12TD008
主 题:Spin-Polarization in Quasi-Magnetic Tunnel Junctions TMR
摘 要:Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasimagnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight.